A complementary transistor structure that utilizes a p-channel modulation-doped FET (p-MODFET) to produce improved p-channel characteristics if reported for the first time. The structure also includes a new type of n-channel MESFET in which the electrons are confined by an n-p heterojunction barrier (n-HB MESFET). The complementary transistor pair is fabricated on a novel MBE-grown n-GaAs/p-(Al,Ga)As/i-GaAs heterostructure. The experimental current-voltage characteristics are presented and demonstrate that this is a promising approach for the development of GaAs-based high-speed complementary logic circuits.
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